KSD261C Bipolar Transistor

Characteristics of KSD261C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 120 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSD261C

The KSD261C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in KSD261.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD261C transistor can have a current gain of 120 to 400. The gain of the KSD261CG will be in the range from 200 to 400, for the KSD261CY it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD261C is the KSA643C.

Replacement and Equivalent for KSD261C transistor

You can replace the KSD261C with the 2N3394, 2N3706, 2SC1959, 2SC2001, 2SC3266, 2SD471, 2SD545, 2SD734, KSD1020, KSD1021, KSD471AC, KTC3266 or KTD1146.
If you find an error please send an email to mail@el-component.com