KSD227O Bipolar Transistor

Characteristics of KSD227O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 70 to 140
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD227O transistor

Pinout of KSD227O

The KSD227O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD227O transistor can have a current gain of 70 to 140. The gain of the KSD227 will be in the range from 70 to 400, for the KSD227G it will be in the range from 200 to 400, for the KSD227Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD227O is the KSA642O.

KSD227O Transistor in TO-92 Package

The 2SD227O is the TO-92 version of the KSD227O.

Replacement and Equivalent for KSD227O transistor

You can replace the KSD227O with the 2N4400, 2SC1210, 2SD227, 2SD227O, 2SD471A, 2SD471AO, KTC9013, MPS3705, MPS6532, MPS6560, MPS6560G, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG, MPSW01G or S9013.
If you find an error please send an email to mail@el-component.com