KSD227 Bipolar Transistor

Characteristics of KSD227 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 70 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD227 transistor

Pinout of KSD227

The KSD227 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD227 transistor can have a current gain of 70 to 400. The gain of the KSD227G will be in the range from 200 to 400, for the KSD227O it will be in the range from 70 to 140, for the KSD227Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD227 is the KSA642.

KSD227 Transistor in TO-92 Package

The 2SD227 is the TO-92 version of the KSD227.

Replacement and Equivalent for KSD227 transistor

You can replace the KSD227 with the 2SD227, 2SD471A, MPS6532, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG or MPSW01G.
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