Characteristics of KSD227G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 25 V
- Collector-Base Voltage, max: 30 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.3 A
- Collector Dissipation: 0.4 W
- DC Current Gain (hfe): 200 to 400
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2SD227G transistor
Pinout of KSD227G
The KSD227G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The KSD227G transistor can have a current gain of
200 to
400. The gain of the
KSD227 will be in the range from
70 to
400, for the
KSD227O it will be in the range from
70 to
140, for the
KSD227Y it will be in the range from
120 to
240.
Complementary PNP transistor
The complementary
PNP transistor to the KSD227G is the
KSA642G.
SMD Version of KSD227G transistor
The
MMBT4124 (SOT-23) and
MMST4124 (SOT-323) is the SMD version of the KSD227G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
KSD227G Transistor in TO-92 Package
The
2SD227G is the TO-92 version of the KSD227G.
Replacement and Equivalent for KSD227G transistor
You can replace the KSD227G with the
2N5172,
2SD227,
2SD227G,
2SD471A,
2SD471AG,
KSD471A,
KSD471AG,
MPS3415,
MPS3417,
MPS650,
MPS650G,
MPS6532,
MPS6601,
MPS6601G,
MPS6602,
MPS6602G,
MPSW01,
MPSW01A,
MPSW01AG,
MPSW01G,
NTE192,
PN100 or
ZTX690B.
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