KSD227G Bipolar Transistor

Characteristics of KSD227G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 200 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SD227G transistor

Pinout of KSD227G

The KSD227G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD227G transistor can have a current gain of 200 to 400. The gain of the KSD227 will be in the range from 70 to 400, for the KSD227O it will be in the range from 70 to 140, for the KSD227Y it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSD227G is the KSA642G.

SMD Version of KSD227G transistor

The MMBT4124 (SOT-23) and MMST4124 (SOT-323) is the SMD version of the KSD227G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

KSD227G Transistor in TO-92 Package

The 2SD227G is the TO-92 version of the KSD227G.

Replacement and Equivalent for KSD227G transistor

You can replace the KSD227G with the 2N5172, 2SD227, 2SD227G, 2SD471A, 2SD471AG, KSD471A, KSD471AG, MPS3415, MPS3417, MPS650, MPS650G, MPS6532, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG, MPSW01G, NTE192, PN100 or ZTX690B.
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