KSA916O Bipolar Transistor

Characteristics of KSA916O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSA916O

The KSA916O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA916O transistor can have a current gain of 80 to 160. The gain of the KSA916 will be in the range from 80 to 240, for the KSA916Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KSA916O is the KSC2316O.

SMD Version of KSA916O transistor

The 2SA1201 (SOT-89), 2SA1201-O (SOT-89), KTA1661 (SOT-89) and KTA1661O (SOT-89) is the SMD version of the KSA916O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSA916O transistor

You can replace the KSA916O with the 2SA1013, 2SA1275, 2SA965, 2SA965-O, KSA1013, KTA1023, KTA1023-O, KTA1023-Y or KTA1275.
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