2SA965-O Bipolar Transistor

Characteristics of 2SA965-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA965-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA965-O transistor can have a current gain of 80 to 160. The gain of the 2SA965 will be in the range from 80 to 240, for the 2SA965-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA965-O might only be marked "A965-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA965-O is the 2SC2235-O.

SMD Version of 2SA965-O transistor

The 2SA1201 (SOT-89), 2SA1201-O (SOT-89), KTA1661 (SOT-89) and KTA1661O (SOT-89) is the SMD version of the 2SA965-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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