KSA1156N Bipolar Transistor

Characteristics of KSA1156N Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 30 to 60
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SA1156N transistor

Pinout of KSA1156N

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA1156N transistor can have a current gain of 30 to 60. The gain of the KSA1156 will be in the range from 30 to 200, for the KSA1156O it will be in the range from 60 to 120, for the KSA1156R it will be in the range from 40 to 80, for the KSA1156Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSA1156N is the KSC2752O.

Replacement and Equivalent for KSA1156N transistor

You can replace the KSA1156N with the 2SA1156 or 2SA1156N.
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