2SA1156N Bipolar Transistor
Characteristics of 2SA1156N Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -400 V
- Collector-Base Voltage, max: -400 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 30 to 60
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SA1156N
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SA1156N transistor
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