2SA1156N Bipolar Transistor

Characteristics of 2SA1156N Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 30 to 60
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1156N

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1156N transistor can have a current gain of 30 to 60. The gain of the 2SA1156 will be in the range from 30 to 200, for the 2SA1156K it will be in the range from 100 to 200, for the 2SA1156L it will be in the range from 60 to 120, for the 2SA1156M it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1156N might only be marked "A1156N".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1156N is the 2SC2752L.

Replacement and Equivalent for 2SA1156N transistor

You can replace the 2SA1156N with the KSA1156 or KSA1156N.
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