KSA1156O Bipolar Transistor

Characteristics of KSA1156O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 60 to 120
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SA1156L transistor

Pinout of KSA1156O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA1156O transistor can have a current gain of 60 to 120. The gain of the KSA1156 will be in the range from 30 to 200, for the KSA1156N it will be in the range from 30 to 60, for the KSA1156R it will be in the range from 40 to 80, for the KSA1156Y it will be in the range from 100 to 200.

Replacement and Equivalent for KSA1156O transistor

You can replace the KSA1156O with the 2SA1156, 2SA1156L, KTA1703 or KTA1703-O.
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