HSD1609S Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 160 V
• Collector-Base Voltage, max: 160 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 0.1 A
• Collector Dissipation: 0.9 W
• DC Current Gain (h_fe): 60 to 320
• Transition Frequency, min: 140 MHz
• Operating and Storage Junction Temperature Range: -50 to +150 °C
• Package: TO-92
• Electrically Similar to the Popular 2SD1609 transistor

The HSD1609S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The HSD1609S transistor can have a current gain of 60 to 320. The gain of the HSD1609S-B will be in the range from 60 to 120, for the HSD1609S-C it will be in the range from 100 to 200, for the HSD1609S-D it will be in the range from 160 to 320.The complementary PNP transistor to the HSD1609S is the HSB1109S.You can replace the HSD1609S with the 2SC2383, 2SC3228, 2SC3467, 2SC3468, KSC2383 or KTC3228.