BUX82 Bipolar Transistor

Characteristics of BUX82 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 800 V
  • Emitter-Base Voltage, max: 10 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BUX82

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BUX82 transistor

You can replace the BUX82 with the BUX80, BUX81, BUX83, MJ10001 or MJ423.
If you find an error please send an email to mail@el-component.com