BUX82 Bipolar Transistor
Characteristics of BUX82 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 800 V
- Emitter-Base Voltage, max: 10 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 75 W
- DC Current Gain (hfe): 30
- Transition Frequency, min: 6 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of BUX82
Replacement and Equivalent for BUX82 transistor
If you find an error please send an email to mail@el-component.com