BSP52T1G Bipolar Transistor

Characteristics of BSP52T1G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223
  • The BSP52T1G is the lead-free version of the BSP52T1 transistor

Pinout of BSP52T1G

Here is an image showing the pin diagram of this transistor.

Marking

The BSP52T1G transistor is marked as "BSP52G".

Complementary PNP transistor

The complementary PNP transistor to the BSP52T1G is the BSP62T1G.

Replacement and Equivalent for BSP52T1G transistor

You can replace the BSP52T1G with the BSP52, BSP52T1, BSP52T3 or BSP52T3G.
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