BSP52T3G Bipolar Transistor
Characteristics of BSP52T3G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 90 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 1.25 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
- The BSP52T3G is the lead-free version of the BSP52T3 transistor
Pinout of BSP52T3G
Marking
Complementary PNP transistor
Replacement and Equivalent for BSP52T3G transistor
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