BDV67A Bipolar Transistor

Characteristics of BDV67A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3P

Pinout of BDV67A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDV67A is the BDV66A.

Replacement and Equivalent for BDV67A transistor

You can replace the BDV67A with the BDV67B, BDV67C or BDV67D.
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