BDT29F Bipolar Transistor

Characteristics of BDT29F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 40 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT29 transistor

Pinout of BDT29F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT29F is the BDT30F.

Replacement and Equivalent for BDT29F transistor

You can replace the BDT29F with the 2SD1274, 2SD1274A, 2SD1274B, BD705, BD707, BD709, BD905, BD907, BD909, BDT29AF, BDT29BF, BDT41, BDT41A, BDT41AF, BDT41B, BDT41BF, BDT41F, TIP29, TIP29A, TIP29AG, TIP29B, TIP29BG, TIP29G, TIP41, TIP41A, TIP41AG, TIP41B, TIP41BG or TIP41G.
If you find an error please send an email to mail@el-component.com