BD179-10 Bipolar Transistor

Characteristics of BD179-10 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 63 to 160
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD179-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD179-10 transistor can have a current gain of 63 to 160. The gain of the BD179 will be in the range from 40 to 250, for the BD179-6 it will be in the range from 40 to 60.

Complementary PNP transistor

The complementary PNP transistor to the BD179-10 is the BD180-10.

SMD Version of BD179-10 transistor

The BDP951 (SOT-223) is the SMD version of the BD179-10 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BD179-10 transistor

You can replace the BD179-10 with the BD179G, BD789, BD791, KSE182, MJE182, MJE182G, MJE240, MJE241, MJE242, MJE243, MJE243G or MJE244.
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