BCX55-10 Bipolar Transistor

Characteristics of BCX55-10 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1.2 W
  • DC Current Gain (hfe): 63 to 150
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-89

Pinout of BCX55-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCX55-10 transistor can have a current gain of 63 to 150. The gain of the BCX55 will be in the range from 63 to 250, for the BCX55-16 it will be in the range from 100 to 250.

Marking

The BCX55-10 transistor is marked as "BG".

Complementary PNP transistor

The complementary PNP transistor to the BCX55-10 is the BCX52-10.

Replacement and Equivalent for BCX55-10 transistor

You can replace the BCX55-10 with the 2SC3444, BCX56 or BCX56-10.
If you find an error please send an email to mail@el-component.com