BCX55 Bipolar Transistor

Characteristics of BCX55 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1.2 W
  • DC Current Gain (hfe): 63 to 250
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-89

Pinout of BCX55

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCX55 transistor can have a current gain of 63 to 250. The gain of the BCX55-10 will be in the range from 63 to 150, for the BCX55-16 it will be in the range from 100 to 250.

Marking

The BCX55 transistor is marked as "BE".

Complementary PNP transistor

The complementary PNP transistor to the BCX55 is the BCX52.

Replacement and Equivalent for BCX55 transistor

You can replace the BCX55 with the 2SC3444 or BCX56.
If you find an error please send an email to mail@el-component.com