BCX56-10 Bipolar Transistor

Characteristics of BCX56-10 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1.2 W
  • DC Current Gain (hfe): 63 to 150
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-89

Pinout of BCX56-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCX56-10 transistor can have a current gain of 63 to 150. The gain of the BCX56 will be in the range from 63 to 250, for the BCX56-16 it will be in the range from 100 to 250.

Complementary PNP transistor

The complementary PNP transistor to the BCX56-10 is the BCX53-10.
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