BC856CW Bipolar Transistor

Characteristics of BC856CW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC856CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856CW transistor can have a current gain of 420 to 800. The gain of the BC856AW will be in the range from 110 to 220, for the BC856BW it will be in the range from 200 to 450, for the BC856W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856CW is the BC846CW.
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