BC817-25W Bipolar Transistor

Characteristics of BC817-25W Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 160 to 400
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323
  • Electrically Similar to the Popular BC337-25 transistor

Pinout of BC817-25W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC817-25W transistor can have a current gain of 160 to 400. The gain of the BC817-16W will be in the range from 100 to 250, for the BC817-40W it will be in the range from 250 to 600, for the BC817W it will be in the range from 100 to 600.

Complementary PNP transistor

The complementary PNP transistor to the BC817-25W is the BC807-25W.

BC817-25W Transistor in TO-92 Package

The BC337-25 is the TO-92 version of the BC817-25W.
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