BC807-40W Bipolar Transistor

Characteristics of BC807-40W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 250 to 600
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323
  • Electrically Similar to the Popular BC327-40 transistor

Pinout of BC807-40W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC807-40W transistor can have a current gain of 250 to 600. The gain of the BC807-16W will be in the range from 100 to 250, for the BC807-25W it will be in the range from 160 to 400, for the BC807W it will be in the range from 100 to 600.

Complementary NPN transistor

The complementary NPN transistor to the BC807-40W is the BC817-40W.

BC807-40W Transistor in TO-92 Package

The BC327-40 is the TO-92 version of the BC807-40W.
If you find an error please send an email to mail@el-component.com