2SD858-R Bipolar Transistor

Characteristics of 2SD858-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 40 to 90
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD858-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD858-R transistor can have a current gain of 40 to 90. The gain of the 2SD858 will be in the range from 40 to 250, for the 2SD858-P it will be in the range from 120 to 250, for the 2SD858-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD858-R might only be marked "D858-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD858-R is the 2SB763-R.

Replacement and Equivalent for 2SD858-R transistor

You can replace the 2SD858-R with the 2SD731, BD245A, BD245B, BD245C, BD249A, BD249B, BD249C, BD745A, BD745B, BD745C, BDV91, BDV93, BDV95, NTE390, TIP33A, TIP33B, TIP33C or TIP35CA.
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