2SD858 Bipolar Transistor

Characteristics of 2SD858 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD858

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD858 transistor can have a current gain of 40 to 250. The gain of the 2SD858-P will be in the range from 120 to 250, for the 2SD858-Q it will be in the range from 70 to 150, for the 2SD858-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD858 might only be marked "D858".

Complementary PNP transistor

The complementary PNP transistor to the 2SD858 is the 2SB763.

Replacement and Equivalent for 2SD858 transistor

You can replace the 2SD858 with the BD245A, BD245B, BD245C, BD249A, BD249B, BD249C, BDV91, BDV93, BDV95 or TIP35CA.
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