2SD667 Bipolar Transistor

Characteristics of 2SD667 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD667

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD667 transistor can have a current gain of 60 to 320. The gain of the 2SD667B will be in the range from 60 to 120, for the 2SD667C it will be in the range from 100 to 200, for the 2SD667D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD667 might only be marked "D667".

Complementary PNP transistor

The complementary PNP transistor to the 2SD667 is the 2SB647.

Replacement and Equivalent for 2SD667 transistor

You can replace the 2SD667 with the 2SC2383, 2SC3228, KSC2383 or KTC3228.
If you find an error please send an email to mail@el-component.com