2SD552-R Bipolar Transistor

Characteristics of 2SD552-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 220 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SD552-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD552-R transistor can have a current gain of 40 to 80. The gain of the 2SD552 will be in the range from 25 to 80, for the 2SD552-DN it will be in the range from 25 to 50.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD552-R might only be marked "D552-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD552-R is the 2SB552-R.

Replacement and Equivalent for 2SD552-R transistor

You can replace the 2SD552-R with the 2N6676, 2N6677, 2SD424, 2SD424-R or 2SD753.
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