2SD261R Bipolar Transistor

Characteristics of 2SD261R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SD261R

The 2SD261R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD261R transistor can have a current gain of 40 to 80. The gain of the 2SD261 will be in the range from 40 to 400, for the 2SD261G it will be in the range from 200 to 400, for the 2SD261O it will be in the range from 70 to 140, for the 2SD261Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD261R might only be marked "D261R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD261R is the 2SA643R.

Replacement and Equivalent for 2SD261R transistor

You can replace the 2SD261R with the MPS3706, MPS6530, MPS6532, PN2218, PN2218A, PN2221, PN2221A or PN3567.
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