2SD261O Bipolar Transistor

Characteristics of 2SD261O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 70 to 140
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SD261O

The 2SD261O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD261O transistor can have a current gain of 70 to 140. The gain of the 2SD261 will be in the range from 40 to 400, for the 2SD261G it will be in the range from 200 to 400, for the 2SD261R it will be in the range from 40 to 80, for the 2SD261Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD261O might only be marked "D261O".

Complementary PNP transistor

The complementary PNP transistor to the 2SD261O is the 2SA643O.

Replacement and Equivalent for 2SD261O transistor

You can replace the 2SD261O with the 2N4400, 2SC1209, 2SD471A, 2SD471AO, KTC9013, MPS3705, MPS3706, MPS6532, MPS6560, MPS6560G, MPS6561, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG, MPSW01G, S9013 or SS9013.
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