2SD1706-R Bipolar Transistor

Characteristics of 2SD1706-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SD1706-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1706-R transistor can have a current gain of 60 to 120. The gain of the 2SD1706 will be in the range from 60 to 260, for the 2SD1706-P it will be in the range from 130 to 260, for the 2SD1706-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1706-R might only be marked "D1706-R".
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