2SD1615-GM Bipolar Transistor

Characteristics of 2SD1615-GM Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 135 to 270
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1615-GM

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1615-GM transistor can have a current gain of 135 to 270. The gain of the 2SD1615 will be in the range from 135 to 600, for the 2SD1615-GK it will be in the range from 300 to 600, for the 2SD1615-GL it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1615-GM might only be marked "D1615-GM".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1615-GM is the 2SB1115-YM.

Replacement and Equivalent for 2SD1615-GM transistor

You can replace the 2SD1615-GM with the 2SC3444, 2SD1615A, 2SD1615A-GQ, 2SD1622, 2SD1623, 2SD1624, 2SD874A, BSR41, BSR43 or KTC4378.
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