2SD1615A Bipolar Transistor

Characteristics of 2SD1615A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 135 to 400
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1615A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1615A transistor can have a current gain of 135 to 400. The gain of the 2SD1615A-GP will be in the range from 200 to 400, for the 2SD1615A-GQ it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1615A might only be marked "D1615A".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1615A is the 2SB1115A.
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