2SD1253A-Q Bipolar Transistor

Characteristics of 2SD1253A-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 70 to 150
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1253A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1253A-Q transistor can have a current gain of 70 to 150. The gain of the 2SD1253A will be in the range from 40 to 250, for the 2SD1253A-P it will be in the range from 120 to 250, for the 2SD1253A-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1253A-Q might only be marked "D1253A-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1253A-Q is the 2SB930A-Q.

SMD Version of 2SD1253A-Q transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1253A-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1253A-Q transistor

You can replace the 2SD1253A-Q with the 2SC3303, 2SD1255, 2SD1256, 2SD1257, 2SD1257A or KTC2022D.
If you find an error please send an email to mail@el-component.com