2SD1252A-R Bipolar Transistor

Characteristics of 2SD1252A-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 40 to 90
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1252A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1252A-R transistor can have a current gain of 40 to 90. The gain of the 2SD1252A will be in the range from 40 to 250, for the 2SD1252A-P it will be in the range from 120 to 250, for the 2SD1252A-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1252A-R might only be marked "D1252A-R".

SMD Version of 2SD1252A-R transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1252A-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1252A-R transistor

You can replace the 2SD1252A-R with the 2SD1253A or 2SD1253A-R.
If you find an error please send an email to mail@el-component.com