2SD1032A-R Bipolar Transistor

Characteristics of 2SD1032A-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 40 to 90
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1032A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1032A-R transistor can have a current gain of 40 to 90. The gain of the 2SD1032A will be in the range from 40 to 250, for the 2SD1032A-P it will be in the range from 120 to 250, for the 2SD1032A-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1032A-R might only be marked "D1032A-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1032A-R is the 2SB812A-R.

SMD Version of 2SD1032A-R transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1032A-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1032A-R transistor

You can replace the 2SD1032A-R with the 2SD731, BD245B, BD245C, BD249B, BD249C, BD745B, BD745C, BDV93, BDV95, MJW21192, MJW21192G, NTE390, TIP33B, TIP33C or TIP35CA.
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