MJW21192G Bipolar Transistor
Characteristics of MJW21192G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 15 to 100
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
- The MJW21192G is the lead-free version of the MJW21192 transistor
Pinout of MJW21192G
Complementary PNP transistor
Replacement and Equivalent for MJW21192G transistor
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