MJW21192G Bipolar Transistor

Characteristics of MJW21192G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • The MJW21192G is the lead-free version of the MJW21192 transistor

Pinout of MJW21192G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJW21192G is the MJW21191G.

Replacement and Equivalent for MJW21192G transistor

You can replace the MJW21192G with the MJW21192.
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