2SD1032 Bipolar Transistor

Characteristics of 2SD1032 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1032

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1032 transistor can have a current gain of 40 to 250. The gain of the 2SD1032-P will be in the range from 120 to 250, for the 2SD1032-Q it will be in the range from 70 to 150, for the 2SD1032-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1032 might only be marked "D1032".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1032 is the 2SB812.

Replacement and Equivalent for 2SD1032 transistor

You can replace the 2SD1032 with the 2SD1032A, 2SD858, BD245A, BD245B, BD245C, BD249A, BD249B, BD249C, BDV91, BDV93, BDV95 or TIP35CA.
If you find an error please send an email to mail@el-component.com