2SD1006-HM Bipolar Transistor
Characteristics of 2SD1006-HM Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.7 A
- Collector Dissipation: 2 W
- DC Current Gain (hfe): 90 to 180
- Transition Frequency, min: 90 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-89
Pinout of 2SD1006-HM
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SD1006-HM transistor
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