2SD1006-HM Bipolar Transistor

Characteristics of 2SD1006-HM Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1006-HM

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1006-HM transistor can have a current gain of 90 to 180. The gain of the 2SD1006 will be in the range from 90 to 400, for the 2SD1006-HK it will be in the range from 200 to 400, for the 2SD1006-HL it will be in the range from 135 to 270.

Marking

The 2SD1006-HM transistor is marked as "HM".

Complementary NPN transistor

The complementary NPN transistor to the 2SD1006-HM is the 2SB805-KM.

Replacement and Equivalent for 2SD1006-HM transistor

You can replace the 2SD1006-HM with the 2SA1201, 2SB805, 2SB805-KM, 2SB806, 2SB806-KR, 2SD1007, 2SD1007-HR or KTA1661.
If you find an error please send an email to mail@el-component.com