2SB806 Bipolar Transistor

Characteristics of 2SB806 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 90 to 400
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB806

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB806 transistor can have a current gain of 90 to 400. The gain of the 2SB806-KP will be in the range from 200 to 400, for the 2SB806-KQ it will be in the range from 135 to 270, for the 2SB806-KR it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB806 might only be marked "B806".

Complementary NPN transistor

The complementary NPN transistor to the 2SB806 is the 2SD1007.

Replacement and Equivalent for 2SB806 transistor

You can replace the 2SB806 with the 2SD1007.
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