2SC1162-B Bipolar Transistor

Characteristics of 2SC1162-B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 35 V
  • Collector-Base Voltage, max: 35 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC1162-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC1162-B transistor can have a current gain of 60 to 120. The gain of the 2SC1162 will be in the range from 60 to 320, for the 2SC1162-C it will be in the range from 100 to 200, for the 2SC1162-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC1162-B might only be marked "C1162-B".

Complementary PNP transistor

The complementary PNP transistor to the 2SC1162-B is the 2SA715-B.

Replacement and Equivalent for 2SC1162-B transistor

You can replace the 2SC1162-B with the 2N4921, 2N4921G, 2N4922, 2N4922G, 2SD794, 2SD794-R, 2SD794A, 2SD794A-R, BD131, BD175, BD177, BD187, BD189, BD437, BD437G, BD439, BD439G, BD785, BD787, BD787G, BDX35, BDX36, KSD794, KSD794-R, KSD794A, KSD794A-R, KSE180, KSE181, MJE180, MJE180G, MJE181, MJE181G, MJE220, MJE221, MJE222, MJE223, MJE224 or MJE225.
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