2SB932 Bipolar Transistor

Characteristics of 2SB932 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 90 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB932

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB932 transistor can have a current gain of 90 to 260. The gain of the 2SB932-P will be in the range from 130 to 260, for the 2SB932-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB932 might only be marked "B932".

Complementary NPN transistor

The complementary NPN transistor to the 2SB932 is the 2SD1255.

Replacement and Equivalent for 2SB932 transistor

You can replace the 2SB932 with the 2SB933 or 2SB934.
If you find an error please send an email to mail@el-component.com