2SB806-KP Bipolar Transistor

Characteristics of 2SB806-KP Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB806-KP

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB806-KP transistor can have a current gain of 200 to 400. The gain of the 2SB806 will be in the range from 90 to 400, for the 2SB806-KQ it will be in the range from 135 to 270, for the 2SB806-KR it will be in the range from 90 to 180.

Marking

The 2SB806-KP transistor is marked as "KP".

Complementary NPN transistor

The complementary NPN transistor to the 2SB806-KP is the 2SD1007-HP.

Replacement and Equivalent for 2SB806-KP transistor

You can replace the 2SB806-KP with the 2SD1007, 2SD1007-HP or PBHV9115X.
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