2SB726-R Bipolar Transistor

Characteristics of 2SB726-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 180 to 360
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB726-R

The 2SB726-R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB726-R transistor can have a current gain of 180 to 360. The gain of the 2SB726 will be in the range from 180 to 700, for the 2SB726-S it will be in the range from 260 to 520, for the 2SB726-T it will be in the range from 360 to 700.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB726-R might only be marked "B726-R".

Replacement and Equivalent for 2SB726-R transistor

You can replace the 2SB726-R with the 2SA1285, 2SA1285A, 2SA1319, 2SA1450, 2SA935, 2SA935-R, 2SA954, 2SB560 or KSA709C.
If you find an error please send an email to mail@el-component.com