2SB706-S Bipolar Transistor
Characteristics of 2SB706-S Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -180 V
- Collector-Base Voltage, max: -180 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 40 to 80
- Transition Frequency, min: 14 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3
Pinout of 2SB706-S
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB706-S transistor
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