2SB706-S Bipolar Transistor

Characteristics of 2SB706-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 14 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3

Pinout of 2SB706-S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB706-S transistor can have a current gain of 40 to 80. The gain of the 2SB706 will be in the range from 40 to 200, for the 2SB706-Q it will be in the range from 100 to 200, for the 2SB706-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB706-S might only be marked "B706-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SB706-S is the 2SD746-S.

Replacement and Equivalent for 2SB706-S transistor

You can replace the 2SB706-S with the 2SA909, 2SB552, 2SB552-R, 2SB554, 2SB554-R, 2SB600, 2SB600-S, 2SB706A, 2SB706A-S, 2SB723, MJ15012 or MJ15012G.
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