2SB554-R Bipolar Transistor

Characteristics of 2SB554-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3

Pinout of 2SB554-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB554-R transistor can have a current gain of 40 to 80. The gain of the 2SB554 will be in the range from 40 to 140, for the 2SB554-O it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB554-R might only be marked "B554-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB554-R is the 2SD424-R.

Replacement and Equivalent for 2SB554-R transistor

You can replace the 2SB554-R with the 2SA909, 2SB552, 2SB552-R or 2SB723.
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