2SB600-S Bipolar Transistor

Characteristics of 2SB600-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SB600-S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB600-S transistor can have a current gain of 40 to 80. The gain of the 2SB600 will be in the range from 40 to 200, for the 2SB600-Q it will be in the range from 100 to 200, for the 2SB600-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB600-S might only be marked "B600-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SB600-S is the 2SD555-S.

Replacement and Equivalent for 2SB600-S transistor

You can replace the 2SB600-S with the 2SA909, 2SB706A, 2SB706A-S, 2SB723, MJ15012 or MJ15012G.
If you find an error please send an email to mail@el-component.com