2SB705B-Q Bipolar Transistor

Characteristics of 2SB705B-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 17 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3

Pinout of 2SB705B-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB705B-Q transistor can have a current gain of 100 to 200. The gain of the 2SB705B will be in the range from 40 to 200, for the 2SB705B-R it will be in the range from 60 to 120, for the 2SB705B-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB705B-Q might only be marked "B705B-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB705B-Q is the 2SD745B-Q.

Replacement and Equivalent for 2SB705B-Q transistor

You can replace the 2SB705B-Q with the 2SA1073, 2SA909, 2SB600, 2SB600-Q, 2SB697K, 2SB697K-E, 2SB706, 2SB706-Q, 2SB706A, 2SB706A-Q, 2SB722, 2SB723 or 2SB723-C.
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