2SB697K-E Bipolar Transistor

Characteristics of 2SB697K-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -40 to +150 °C
  • Package: TO-3

Pinout of 2SB697K-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB697K-E transistor can have a current gain of 100 to 200. The gain of the 2SB697K will be in the range from 40 to 320, for the 2SB697K-C it will be in the range from 40 to 80, for the 2SB697K-D it will be in the range from 60 to 120, for the 2SB697K-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB697K-E might only be marked "B697K-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB697K-E is the 2SD733K-E.

Replacement and Equivalent for 2SB697K-E transistor

You can replace the 2SB697K-E with the 2SA1073, 2SA909, 2SB722, 2SB723 or 2SB723-C.
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