2SB697K-E Bipolar Transistor
Characteristics of 2SB697K-E Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -180 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -40 to +150 °C
- Package: TO-3
Pinout of 2SB697K-E
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB697K-E transistor
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