2SB648 Bipolar Transistor

Characteristics of 2SB648 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB648

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB648 transistor can have a current gain of 60 to 320. The gain of the 2SB648-B will be in the range from 60 to 120, for the 2SB648-C it will be in the range from 100 to 200, for the 2SB648-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB648 might only be marked "B648".

Complementary NPN transistor

The complementary NPN transistor to the 2SB648 is the 2SD668.

Replacement and Equivalent for 2SB648 transistor

You can replace the 2SB648 with the 2SA1021, 2SA1220, 2SA1220A, 2SA1352, 2SA1380, 2SA1404, 2SA1405, 2SA1406, 2SA1407, 2SA1478, 2SA1538, 2SA1539, 2SA1540, 2SA1541, 2SB1109, 2SB1110, 2SB631K, 2SB649, HSB1109, KSA1220 or KSA1220A.
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