2SB556 Bipolar Transistor

Characteristics of 2SB556 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 40 to 140
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SB556

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB556 transistor can have a current gain of 40 to 140. The gain of the 2SB556-O will be in the range from 70 to 140, for the 2SB556-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB556 might only be marked "B556".

Complementary NPN transistor

The complementary NPN transistor to the 2SB556 is the 2SD426.

Replacement and Equivalent for 2SB556 transistor

You can replace the 2SB556 with the 2SA1041, 2SA1043, 2SA679, 2SA908, 2SA909, 2SB554, 2SB555, 2SB697, 2SB697K, 2SB723, MJ15002, MJ15002G, MJ15004 or MJ15004G.
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