2SB555 Bipolar Transistor

Characteristics of 2SB555 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 40 to 140
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SB555

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB555 transistor can have a current gain of 40 to 140. The gain of the 2SB555-O will be in the range from 70 to 140, for the 2SB555-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB555 might only be marked "B555".

Complementary NPN transistor

The complementary NPN transistor to the 2SB555 is the 2SD425.

Replacement and Equivalent for 2SB555 transistor

You can replace the 2SB555 with the 2SA908, 2SA909, 2SB554, 2SB697, 2SB697K, 2SB723, MJ15002, MJ15002G, MJ15004 or MJ15004G.
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